january 2005 2005 fairchild semiconductor corporation FDS4885C rev d(w) FDS4885C dual n & p-channel powertrench mosfet general description these dual n- and p-channel enhancement mode power field effect transistors are produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. applications synchronous rectifier backlight inverter stage features q1 : n-channel 7.5a, 40 v r ds(on) = 22m w @ v gs = 10v r ds(on) = 35m w @ v gs = 7v q2 : p-channel ?6a, ?40v r ds(on) = 31m w @ v gs = ?10v r ds(on) = 42m w @ v gs = ?4.5v fast switching speed high power and handling capability in a widely used surface mount package s d s s so-8 d d d g d1 d1 d2 d2 s1 g1 s2 g2 pin 1 so-8 4 3 2 1 5 6 7 8 q 1 q 2 absolute maximum ratings t a = 25c unless otherwise noted symbol parameter q1 q2 units v dss drain-source voltage 40 40 v v gss gate-source voltage 20 20 v i d drain current - continuous (note 1a) 7.5 ?6 a - pulsed 20 ?20 p d power dissipation for dual operation 2 w power dissipation for single operation (note 1a) 1.6 (note 1b) 1 (note 1c) 0.9 t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r q jc thermal resistance, junction-to-case (note 1) 40 package marking and ordering information device marking device reel size tape width quantity FDS4885C FDS4885C 13? 12mm 2500 units FDS4885C
FDS4885C rev d(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 m a v gs = 0 v, i d = ?250 m a q1 q2 40 ?40 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c i d = ?250 a, referenced to 25 c q1 q2 40 ?30 mv/ c i dss zero gate voltage drain current v ds = 32 v, v gs = 0 v v d s = ?32 v, v gs = 0 v q1 q2 1 ?1 m a i gssf gate-body leakage, forward v gs = 20 v, v ds = 0 v all 100 na i gssr gate-body leakage, reverse v gs = ?20 v, v ds = 0 v all ?100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = 250 m a v ds = v gs , i d = ?250 a q1 q2 2 ?1 4 ?1.6 5 ?3 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c i d = ?250 a, referenced to 25 c q1 q2 ?9 5 mv/ c v gs = 10 v, i d = 7.5 a v gs = 7 v, i d = 6.5 a v gs = 10 v, i d = 7.5 a, t j = 125 c q1 17 27 26 22 35 36 m w r ds(on) static drain-source on-resistance v gs = ?10 v, i d = ?6 a v gs = ?4.5 v, i d = ?5.3 a v gs = ?10 v, i d = ?6 a, t j = 125 c q2 26 34 37 31 42 47 g fs forward transconductance v d s = 10 v, i d = 7.5 a v ds = ?10 v, i d =?6 a q1 q2 14 19 s dynamic characteristics c iss input capacitance q1 q2 900 1560 pf c oss output capacitance q1 q2 200 215 pf c rss reverse transfer capacitance q1 v ds = 20 v, v gs = 0 v, f = 1.0 mhz q2 v ds = ?20 v, v gs = 0 v, f = 1.0 mhz q1 q2 100 110 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz q1 q2 2 9 w FDS4885C
FDS4885C rev d(w) electrical characteristics (continued) t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units switching characteristics (note 2) t d(on) turn-on delay time q1 q2 26 11 42 20 ns t r turn-on rise time q1 q2 36 14 58 25 ns t d(off) turn-off delay time q1 q2 45 71 72 114 ns t f turn-off fall time q1 v dd = 20 v, i d = 1 a, v gs = 10v, r gen = 6 w q2 v dd = ?20 v, i d = ?1 a, v gs = ?10v, r gen = 6 w q1 q2 33 30 53 48 ns q g total gate charge q1 q2 15 29 21 41 nc q gs gate-source charge q1 q2 5 4 nc q gd gate-drain charge q1 v d s = 20 v, i d = 7.5 a, v gs = 10 v q2 v ds = ?20 v, i d = ?6 a,v gs = ?10 v q1 q2 4.6 5 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q1 q2 1.3 ?1.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2) v gs = 0 v, i s = ?1.3 a (note 2) q1 q2 0.7 ?0.7 1.2 ?1.2 v t rr diode reverse recovery time q1 q2 26 26 ns q rr diode reverse recovery charge q1 i f = 7.5 a, d if / d t = 100 a/s q2 i f = ? 6 a, d if / d t = 100 a/s q1 q2 18 13 nc notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 78/w when mounted on a 0.5 in 2 pad of 2 oz copper b) 125/w when mounted on a .02 in 2 pad of 2 oz copper c) 135/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% FDS4885C
FDS4885C rev d(w) typical characteristics: q1 (n-channel) 0 4 8 12 16 20 0 0.25 0.5 0.75 1 1.25 1.5 v ds , drain to source voltage (v) i d , drain current (a) v gs = 10v 6.5v 7.0v 8.0v 5.5v 6.0v 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 0 4 8 12 16 20 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 6.0v 8.0v 6.5v 10v 7.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 7.5a v gs = 10v 0.015 0.025 0.035 0.045 0.055 0.065 0.075 5 6 7 8 9 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 3.8a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 25 30 35 40 45 50 3 4 5 6 7 8 9 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDS4885C
FDS4885C rev d(w) typical characteristics: q1 (n-channel) 0 2 4 6 8 10 12 14 0 4 8 12 16 20 24 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 7.5a v ds = 10v 30v 20v 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 m s r ds(on) limit v gs = 10.0v single pulse r q ja = 135 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 135c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. FDS4885C
FDS4885C rev d(w) typical characteristics: q2 (p-channel) 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -10v -6.0v -4.0v -4.5v -3.0v -3.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 5 10 15 20 25 30 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = - 3.0v -3.5v -6.0v -4.5v -4.0v -10v figure 11. on-region characteristics. figure 12. on-resistance variation with drain current and gate voltage. 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -6a v gs = - 10v 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 2 4 6 8 10 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -3a t a = 125 o c t a = 25 o c figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 25 1 1.5 2 2.5 3 3.5 4 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. FDS4885C
FDS4885C rev d(w) typical characteristics: q2 (p-channel) 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -6a v ds = -10v -20v -30v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 35 40 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 17. gate charge characteristics. figure 18. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms 100 m r ds(on) limit v gs = -10v single pulse r q ja = 135 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 135c/w t a = 25c figure 19. maximum safe operating area. figure 20. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) * r q ja r q ja = 135 o c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 21. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDS4885C
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i15 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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